Modelling negative bias temperature instabilities in advanced p-MOSFETs. - M. Houssa (Microelectron. Reliab., 2005)

Negative bias temperature instabilities in HfSiO(N)-based MOSFETs: Electrical characterization and modeling. - M. Houssa; Marc Aoulaiche; Stefan De Gendt; Guido Groeseneken; Marc M. Heyns (Microelectron. Reliab., 2007)

NBTI reliability of Ni FUSI/HfSiON gates: Effect of silicide phase. - A. Shickova; Ben Kaczer; Anabela Veloso; Marc Aoulaiche; M. Houssa; Herman E. Maes; Guido Groeseneken; J. A. Kittl (Microelectron. Reliab., 2007)

Optimization of the write algorithm at low-current (10μA) in Cu/Al2O3-based conductive-bridge RAM. - Attilio Belmonte; Andrea Fantini; Augusto Redolfi; M. Houssa; Malgorzata Jurczak; Ludovic Goux (ESSDERC, 2015)

TDDB Reliability Improvement of Low Thermal Budget RMG Stacks. - G. Molinaro; Hiroaki Arimura; S. Sacchi; Andrea Vici; Robin Degraeve; Ben Kaczer; Naoto Horiguchi; M. Houssa; Jacopo Franco (IRPS, 2025)