A 256-Mcell Phase-Change Memory Chip Operating at 2+ Bit/Cell. - Gael F. Close; Urs Frey; Jack Morrish; Richard Jordan; Scott C. Lewis; Tom Maffitt; M. J. BrightSky; Christoph Hagleitner; Chung Hon Lam; Evangelos Eleftheriou (IEEE Trans. Circuits Syst. I Regul. Pap., 2013)

Brain-like associative learning using a nanoscale non-volatile phase change synaptic device array. - Sukru Burc Eryilmaz; Duygu Kuzum; Rakesh Gnana David Jeyasingh; SangBum Kim; Matthew BrightSky; Chung Lam; H.-S. Philip Wong (CoRR, 2014)

Experimental Demonstration of Array-level Learning with Phase Change Synaptic Devices. - Sukru Burc Eryilmaz; Duygu Kuzum; Rakesh Gnana David Jeyasingh; SangBum Kim; Matthew BrightSky; Chung Lam; H.-S. Philip Wong (CoRR, 2014)

7.3 A resistance-drift compensation scheme to reduce MLC PCM raw BER by over 100× for storage-class memory applications. - Win-San Khwa; Meng-Fan Chang; Jau-Yi Wu; Ming-Hsiu Lee; Tzu-Hsiang Su; Keng-Hao Yang; Tien-Fu Chen; Tien-Yen Wang; Hsiang-Pang Li; Matthew BrightSky; SangBum Kim; Hsiang-Lam Lung; et al. (ISSCC, 2016)

Training a Probabilistic Graphical Model with Resistive Switching Electronic Synapses. - Sukru Burc Eryilmaz; Emre Neftci; Siddharth Joshi 001; SangBum Kim; Matthew BrightSky; Hsiang-Lan Lung; Chung Lam; Gert Cauwenberghs; H.-S. Philip Wong (CoRR, 2016)

Recent Progress in Phase-Change Memory Technology. - Geoffrey W. Burr; Matthew J. BrightSky; Abu Sebastian; Huai-Yu Cheng; Jau-Yi Wu; SangBum Kim; Norma E. Sosa; Nikolaos Papandreou; Hsiang-Lan Lung; Haralampos Pozidis; Evangelos Eleftheriou; Chung Hon Lam (IEEE J. Emerg. Sel. Topics Circuits Syst., 2016)

Opportunities for Analog Coding in Emerging Memory Systems. - Jesse H. Engel; Sukru Burc Eryilmaz; SangBum Kim; Matthew BrightSky; Chung Lam; Hsiang-Lan Lung; Bruno A. Olshausen; H.-S. Philip Wong (CoRR, 2017)

A Resistance Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over 100× for Storage Class Memory Applications. - Win-San Khwa; Meng-Fan Chang; Jau-Yi Wu; Ming-Hsiu Lee; Tzu-Hsiang Su; Keng-Hao Yang; Tien-Fu Chen; Tien-Yen Wang; Hsiang-Pang Li; Matthew J. BrightSky; SangBum Kim; Hsiang-Lam Lung; et al. (IEEE J. Solid State Circuits, 2017)

Reliability benefits of a metallic liner in confined PCM. - Wanki Kim; SangBum Kim; Robert L. Bruce; Fabio Carta; G. Fraczak; A. Ray; Chung Lam; Matthew BrightSky; Yu Zhu; T. Masuda; K. Suu; Yujun Xie; et al. (IRPS, 2018)

Performance Analysis of Spiking RBM with Measurement-Based Phase Change Memory Model. - Masatoshi Ishii; Megumi Ito; Wanki Kim; SangBum Kim; Akiyo Nomura; Atsuya Okazaki; Junka Okazawa; Kohji Hosokawa; Matthew BrightSky; Wilfried Haensch (ICONIP (5), 2019)

Reliability Challenges with Materials for Analog Computing. - Eduard A. Cartier; Wanki Kim; Nanbo Gong; Tayfun Gokmen; Martin M. Frank; Douglas M. Bishop; Youngseok Kim; Seyoung Kim; Takashi Ando; Ernest Y. Wu; Praneet Adusumilli; John Rozen; et al. (IRPS, 2019)

Mushroom-Type phase change memory with projection liner: An array-level demonstration of conductance drift and noise mitigation. - Robert L. Bruce; Syed Ghazi Sarwat; Irem Boybat; Cheng-Wei Cheng; Wanki Kim; S. R. Nandakumar; Charles Mackin; Timothy Philip; Zuoguang Liu; Kevin Brew; Nanbo Gong; Injo Ok; et al. (IRPS, 2021)

Accurate Weight Mapping in a Multi-Memristive Synaptic Unit. - Michele Martemucci; Benedikt Kersting; Riduan Khaddam-Aljameh; Irem Boybat; S. R. Nandakumar; Urs Egger; Matthew BrightSky; Robert L. Bruce; Manuel Le Gallo; Abu Sebastian (ISCAS, 2021)

A Multi-Memristive Unit-Cell Array With Diagonal Interconnects for In-Memory Computing. - Riduan Khaddam-Aljameh; Michele Martemucci; Benedikt Kersting; Manuel Le Gallo; Robert L. Bruce; Matthew BrightSky; Abu Sebastian (IEEE Trans. Circuits Syst. II Express Briefs, 2021)

Endurance Evaluation on OTS-PCM Device using Constant Current Stress Scheme. - Wei-Chih Chien; Lynne M. Gignac; Y. C. Chou; C. H. Yang; N. Gong; H. Y. Ho; C. W. Yeh; H. Y. Cheng; W. Kim; I. T. Kuo; E. K. Lai; C. W. Cheng; et al. (IRPS, 2022)

Pattern Training, Inference, and Regeneration Demonstration Using On-Chip Trainable Neuromorphic Chips for Spiking Restricted Boltzmann Machine. - Uicheol Shin; Masatoshi Ishii; Atsuya Okazaki; Megumi Ito; Malte J. Rasch; Wanki Kim; Akiyo Nomura; Wonseok Choi 012; Dooyong Koh; Kohji Hosokawa; Matthew BrightSky; Seiji Munetoh; et al. (Adv. Intell. Syst., 2022)

A Comprehensive Study on the Pillar Size of OTS-PCM Memory with an Optimized Process and Scaling Trends Down to Sub-10 nm for SCM Applications. - Wei-Chih Chien; E. K. Lai; L. Buzi; C. W. Cheng; C. W. Yeh; A. Ray; Lynne M. Gignac; N. Gong; Huai-Yu Cheng; Alexander Grun; D. Y. Lee; W. Kim; et al. (IMW, 2023)

A Novel Program-verify Free and Low Drift Multilevel Operation on Cross-point OTS-PCM for In-Memory Computing Application. - Wei-Chih Chien; C. L. Sung; Robert L. Bruce; C. W. Yeh; Huai-Yu Cheng; Z. L. Liu; E. K. Lai; C. W. Cheng; J. X. Zheng; Alexander Grun; A. Ray; D. Daudelin; et al. (IMW, 2024)

AsSeGeS and GeN Heterostructures for Superior OTS Performance. - Alexander Grun; Z. L. Lui; C. W. Cheng; D. Piatek; E. K. Lai; Y. T. Kuo; Wei-Chih Chien; S. Cheng; M. J. BrightSky; H. L. Lung; Huai-Yu Cheng (IMW, 2024)

A Novel Chalcogenide Based CuGeSe Selector Only Memory (SOM) for 3D Xpoint and 3D Vertical Memory Applications. - Wei-Chih Chien; J. X. Zheng; C. W. Yeh; Lynne M. Gignac; H. Y. Cheng; Z. L. Liu; Alexander Grun; C. L. Sung; E. K. Lai; S. Cheng; C. W. Cheng; L. Buzi; et al. (VLSI Technology and Circuits, 2024)