Morphological and optical properties of p-type GaAs(001) layers doped with silicon. - T. E. Lamas; Sandro Martini; M. J. da Silva; A. A. Quivy; J. R. Leite (Microelectron. J., 2003)

Coupled rate equation modeling of self-assembled quantum dot photoluminescence. - F. V. de Sales; Júnio Márcio Rosa Cruz; Sebastião William da Silva; M. A. G. Soler; Paulo César de Morais; M. J. da Silva; A. A. Quivy; J. R. Leite (Microelectron. J., 2003)

Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3mum. - M. J. da Silva; Sandro Martini; T. E. Lamas; A. A. Quivy; E. C. F. da Silva; J. R. Leite (Microelectron. J., 2003)