Photoluminescence beyond 1.5mum from InAs quantum dots. - Jo Shien Ng; H. Y. Liu; M. J. Steer; Mark Hopkinson; J. P. R. David (Microelectron. J., 2006)

Empirical bond order potential calculations of the elastic properties of epitaxial InGaSbAs layers. - Vesel Haxha; Raman Garg; Max A. Migliorato; I. W. Drouzas; José María Ulloa; P. M. Koenraad; M. J. Steer; H. Y. Liu; Mark Hopkinson; D. J. Mowbray (Microelectron. J., 2009)

High Aspect Ratio Junctionless InGaAs FinFETs Fabricated Using a Top-Down Approach. - D. A. J. Millar; X. Li; U. Peralagu; M. J. Steer; I. M. Pavey; Guilherme Gaspar; M. Schmidt; Paul K. Hurley; I. G. Thayne (DRC, 2018)