Physical analysis of hard and soft breakdown failures in ultrathin gate oxides. - M. K. Radhakrishnan; Kin Leong Pey; C. H. Tung; W. H. Lin (Microelectron. Reliab., 2002)

ESD Reliability Challenges for RF/Mixed Signal Design & Processing. - Natarajan Mahadeva Iyer; M. K. Radhakrishnan (VLSI Design, 2003)

Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM. - Kin Leong Pey; C. H. Tung; M. K. Radhakrishnan; L. J. Tang; Y. Sun; X. D. Wang; W. H. Lin (Microelectron. Reliab., 2003)

Device Reliability and Failure Mechanisms Related to Gate Dielectrics and Interconnects. - M. K. Radhakrishnan (VLSI Design, 2004)