Device simulation for smart integrated systems (DESSIS). - Giorgio Baccarani; Massimo Rudan; M. Lorenzini; Wolfgang Fichtner; J. Litsios; A. Schenk; P. Van Staa; L. Kaeser; A. Kampmann; A. Marmiroli; C. Sala; E. Ravanelli (ICECS, 1996)

Recent Advances in Device Simulation Using Standard Transport Models. - Giorgio Baccarani; Massimo Rudan; M. Lorenzini; C. Sala (VLSI Design, 1998)

Simulation of 0.35 μm/0.25 μm CMOS Technology Doping Profiles. - M. Lorenzini; Luc Haspeslagh; Jan Van Houdt; Herman E. Maes (VLSI Design, 2001)

Degradation of 0.25 μm GaN HEMTs under high temperature stress test. - Maximilian Dammann; Martina Baeumler; Peter Brückner; Wolfgang Bronner; Stephan Maroldt; Helmer Konstanzer; Matthias Wespel; Rüdiger Quay; Michael Mikulla; Andreas Graff; M. Lorenzini; M. Fagerlind; et al. (Microelectron. Reliab., 2015)