Low frequency noise characterization in 0.13 mum p-MOSFETs. Impact of scaled-down 0.25, 0.18 and 0.13 mum technologies on 1/f noise. - M. Marin; Y. Akue Allogo; M. de Murcia; P. Llinares; J. C. Vildeuil (Microelectron. Reliab., 2004)

Dc and low frequency noise analysis of hot-carrier induced degradation of low complexity 0.13 mum CMOS bipolar transistors. - P. Benoit; Jérémy Raoult; C. Delseny; Fabien Pascal; L. Snadny; J. C. Vildeuil; M. Marin; B. Martinet; D. Cottin; Olivier Noblanc (Microelectron. Reliab., 2005)

Impact of inside spacer process on fully self-aligned 250 GHz SiGe: C HBTs reliability performances: a-Si vs. nitride. - Malick Diop; Nathalie Revil; M. Marin; Frederic Monsieur; Pascal Chevalier 002; Gérard Ghibaudo (Microelectron. Reliab., 2008)