Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition. - M. Millesimo; Benoit Bakeroot; Matteo Borga; Niels Posthuma; Stefaan Decoutere; Enrico Sangiorgi; Claudio Fiegna; Andrea Natale Tallarico (IRPS, 2022)

Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate. - M. Millesimo; Claudio Fiegna; Benoit Bakeroot; Matteo Borga; Niels Posthuma; Stefaan Decoutere; Enrico Sangiorgi; Andrea Natale Tallarico (IRPS, 2024)

A Convolutional-Transformer Model for FFR and iFR Assessment From Coronary Angiography. - Raffaele Mineo; Federica Proietto Salanitri; Giovanni Bellitto; Isaak Kavasidis; Ovidio De Filippo; M. Millesimo; Gaetano Maria de Ferrari; Marco Aldinucci; Daniela Giordano; Simone Palazzo; Fabrizio D'Ascenzo; Concetto Spampinato (IEEE Trans. Medical Imaging, 2024)

RTN Analysis of Schottky p-GaN Gate HEMTs Under Forward Gate Stress: Impact of Temperature. - M. Millesimo; L. Valentini; Claudio Fiegna; Enrico Sangiorgi; Andrea Natale Tallarico; Matteo Borga; Niels Posthuma; Stefaan Decoutere; Benoit Bakeroot (IRPS, 2025)

HTGB and DGS Reliability Assessment of e-mode GaN-HEMTs with Ferroelectric Gate Stack. - Andrea Natale Tallarico; M. Millesimo; U. Ibrar; Enrico Sangiorgi; Claudio Fiegna; T.-Y. Yang; J.-S. Wu; H. Iwai; E.-Y. Chang (IRPS, 2025)