X-ray and UV controlled adjustment of MOS VLSI circuits threshold voltages. - M. N. Levin; V. R. Gitlin; S. G. Kadmensky; S. S. Ostrouhov; V. S. Pershenkov (Microelectron. Reliab., 2001)

Use of preliminary ultraviolet and infrared illumination for diagnostics of MOS and bipolar devices radiation response. - V. S. Pershenkov; S. V. Avdeev; A. S. Tsimbalov; M. N. Levin; V. V. Belyakov; D. V. Ivashin; A. Y. Slesarev; A. Y. Bashin; Gennady I. Zebrev; Viktor N. Ulimov (Microelectron. Reliab., 2002)