High-Temperature Characterization of Novel Silicon-Based Substrate Solutions for RF-IC Applications. - Quentin Courte; Martin Rack; M. Nabet; Pieter Cardinael; Jean-Pierre Raskin (ESSDERC, 2021)

Analysis of Back-Gate Bias Control on EVM Measurements of a Dual-Band Power Amplifier in 22 nm FD-SOI for 5G 28 and 39 GHz Applications. - Lucas Nyssens; M. Nabet; Martin Rack; Youssef Bendou; Sidina Wane; Jacques Sombrin; Jean-Pierre Raskin; Dimitri Lederer (IEEE Trans. Circuits Syst. I Regul. Pap., 2025)