Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM. - Kevin Garello; Farrukh Yasin; Hubert Hody; S. Couet; Laurent Souriau; Shamin H. Sharifi; Johan Swerts; Robert Carpenter; Sidharth Rao; Wonsub Kim; J. Wu; K. K. V. Sethu; et al. (VLSI Circuits, 2019)

First demonstration of ferroelectric Si: HfO2 based 3D FE-FET with trench architecture for dense nonvolatile memory application. - K. Banerjee; Laurent Breuil; A. P. Milenin; M. Pak; J. Stiers; Sean R. C. McMitchell; L. Di Piazza; Geert Van den Bosch; Jan Van Houdt (IMW, 2021)

Device engineering guidelines for performance boost in IGZO front gated TFTs based on defect control. - S. Subhechha; Nouredine Rassoul; Attilio Belmonte; Hubert Hody; Harold Dekkers; Michiel J. van Setten; Adrian Vaisman Chasin; Shamin H. Sharifi; K. Banerjee; H. Puliyalil; Shreya Kundu; M. Pak; et al. (ICICDT, 2022)

Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm. - S. Subhechha; Nouredine Rassoul; Attilio Belmonte; Hubert Hody; Harold Dekkers; Michiel J. van Setten; Adrian Vaisman Chasin; Shamin H. Sharifi; S. Sutar; L. Magnarin; Umberto Celano; H. Puliyalil; et al. (VLSI Technology and Circuits, 2022)