Process dependence of BTI reliability in advanced HK MG stacks. - Xavier Garros; Mikaël Cassé; M. Rafik; Claire Fenouillet-Béranger; Gilles Reimbold; François Martin; Claudia Wiemer; F. Boulanger (Microelectron. Reliab., 2009)

Unified soft breakdown MOSFETs compact model: From experiments to circuit simulation. - L. Gerrer; M. Rafik; G. Ribes; Gérard Ghibaudo; E. Vincent (Microelectron. Reliab., 2010)

Challenges and opportunity in performance, variability and reliability in sub-45 nm CMOS technologies. - Franck Arnaud; L. Pinzelli; C. Gallon; M. Rafik; P. Mora; Frédéric Boeuf (Microelectron. Reliab., 2011)

Performance and reliability of strained SOI transistors for advanced planar FDSOI technology. - Guillaume Besnard; Xavier Garros; Alexandre Subirats; François Andrieu; X. Federspiel; M. Rafik; Walter Schwarzenbach; Gilles Reimbold; Olivier Faynot; Sorin Cristoloveanu (IRPS, 2015)

Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment. - A. Bezza; M. Rafik; David Roy 001; X. Federspiel; P. Mora; Cheikh Diouf; Vincent Huard; Gérard Ghibaudo (IRPS, 2015)

Modeling self-heating effects in advanced CMOS nodes. - M. Arabi; A. Cros; X. Federspiel; Cheikh Ndiaye; Vincent Huard; M. Rafik (IRPS, 2018)

A new method for quickly evaluating reversible and permanent components of the BTI degradation. - Xavier Garros; Alexandre Subirats; Gilles Reimbold; Fred Gaillard; Cheikh Diouf; X. Federspiel; Vincent Huard; M. Rafik (IRPS, 2018)

AC TDDB extensive study for an enlargement of its impact and benefit on circuit lifetime assessment. - M. Rafik; A. P. Nguyen; Xavier Garros; M. Arabi; X. Federspiel; Cheikh Diouf (IRPS, 2018)

New NBTI models for degradation and relaxation kinetics valid over extended temperature and stress/recovery ranges. - D. Nouguier; X. Federspiel; Gérard Ghibaudo; M. Rafik; David Roy 001 (Microelectron. Reliab., 2018)

Process Optimization for HCI Improvement in I/O Analog Devices. - Cheikh Diouf; N. Guitard; M. Rafik; J. J. Martinez; X. Federspiel; Alain Bravaix; D. Muller; David Roy 001 (IRPS, 2019)

Impact of Passive & Active Load Gate Impedance on Breakdown Hardness in 28nm FDSOI Technology. - A. P. Nguyen; Xavier Garros; M. Rafik; Florian Cacho; David Roy 001; Xavier Federspiel; Fred Gaillard (IRPS, 2019)

Frequency dependant gate oxide TDDB model. - M. Arabi; X. Federspiel; Florian Cacho; M. Rafik; S. Blonkowski; Xavier Garros; G. Guibaudo (IRPS, 2022)