Reaction-diffusion based model to develop binocular simple cells in visual cortex along with cortical maps. - M. Sultan M. Siddiqui; Basabi Bhaumik (IJCNN, 2010)

Two Phase Write Scheme to Improve Low Voltage Write-ability in Medium-Density SRAMs. - M. Sultan M. Siddiqui; Shailendra Sharad; Yogendra Sharma; Amit Khanuja (VLSID, 2015)

An 8T SRAM with BTI-Aware Stability Monitor and two-phase write operation for cell stability improvement in 28-nm FDSOI. - Zhao Chuan Lee; M. Sultan M. Siddiqui; Zhi-Hui Kong; Tony Tae-Hyoung Kim (ESSCIRC, 2016)

A 16kb column-based split cell-VSS, data-aware write-assisted 9T ultra-low voltage SRAM with enhanced read sensing margin in 28nm FDSOI. - M. Sultan M. Siddiqui; Zhao Chuan Lee; Tony Tae-Hyoung Kim (A-SSCC, 2017)

A Radiation Hardened SRAM with Self-refresh and Compact Error Correction. - M. Sultan M. Siddiqui; Ruchi Sharma; Van Loi Le; Taegeun Yoo; Ik-Joon Chang; Tony Tae-Hyoung Kim (ISOCC, 2018)

A 7-Nm Dual Port 8T SRAM with Duplicated Inter-Port Write Data to Mitigate Write Disturbance. - M. Sultan M. Siddiqui; Sumit Srivastav; Dattatray Ramrao Wanjul; Manankumar Suthar; Sudhir Kumar 002 (VLSID, 2018)

A 10T SRAM Cell with Enhanced Read Sensing Margin and Weak NMOS Keeper for Large Signal Sensing to Improve VDDMIN. - M. Sultan M. Siddiqui; Sudhir Kumar Sharma; Saurabh Porwal; Khatik Bhagvan Pannalal; Sudhir Kumar 002 (ISCAS, 2019)

An 8T SRAM With On-Chip Dynamic Reliability Management and Two-Phase Write Operation in 28-nm FDSOI. - Zhao Chuan Lee; M. Sultan M. Siddiqui; Zhi-Hui Kong; Tony Tae-Hyoung Kim (IEEE J. Solid State Circuits, 2019)

A 16-kb 9T Ultralow-Voltage SRAM With Column-Based Split Cell-VSS, Data-Aware Write-Assist, and Enhanced Read Sensing Margin in 28-nm FDSOI. - M. Sultan M. Siddiqui; Zhao Chuan Lee; Tony Tae-Hyoung Kim (IEEE Trans. Very Large Scale Integr. Syst., 2021)