Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption. - Quentin Hubert; Carine Jahan; Alain Toffoli; Gabriele Navarro; S. Chandrashekar; Pierre Noe; Veronique Sousa; Luca Perniola; J.-F. Nodin; A. Persico; S. Maitrejean; A. Roule; et al. (ESSDERC, 2012)

16kbit 1T1R OxRAM arrays embedded in 28nm FDSOI technology demonstrating low BER, high endurance, and compatibility with core logic transistors. - Laurent Grenouillet; Niccolo Castellani; Alain Persico; Valentina Meli; Simon Martin 006; Olivier Billoint; R. Segaud; Stefania Bernasconi; C. Pellissier; Carine Jahan; Christelle Charpin-Nicolle; P. Dezest; et al. (IMW, 2021)

Multilayer Deposition in Phase-Change Memory for Best Endurance Performance and Reduced Bit Error Rate. - Gabriele Navarro; C. Sabbione; Valentina Meli; L. E. Nistor; M. Frei; Julien Garrione; M. Tessaire; F. Fillot; Nicolas Bernier; Emmanuel Nolot; Benoit Sklénard; J. Li; et al. (IMW, 2022)

Reliability Performances Tuning in Ge-rich GeSbTe Phase-Change Memory Thanks to Multilayered Ge//GeSbTe Stacks. - N.-A. Nguyen; O. Daoudi; Mathieu Bernard; L. Fellouh; M. Tessaire; C. Sabbione; Z. Saghi; T. Monniez; C. De Camaret; Emmanuel Nolot; Guillaume Bourgeois; A. Salvi; et al. (IRPS, 2025)