Investigations of AlGaN/GaN field-effect transistor structures by photoreflectance spectroscopy. - J. Misiewicz; R. Kudrawiec; Marcin Syperek; R. Paszkiewicz; B. Paszkiewicz; M. Tlaczala (Microelectron. J., 2005)

Application of micro-Raman spectroscopy for the evaluation of doping profile in Zn delta-doped GaAs structures. - R. Srnánek; G. Irmer; D. Donoval; J. Osvald; D. Mc Phail; A. Christoffi; B. Sciana; D. Radziewicz; M. Tlaczala (Microelectron. J., 2008)

Quantitative analysis of doping profile on beveled p-type GaAs structures by micro-Raman spectroscopy. - R. Srnánek; G. Irmer; D. Donoval; A. Vincze; B. Sciana; D. Radziewicz; M. Tlaczala (Microelectron. J., 2008)

Preparation and properties of Zn delta-doped GaAs/AlGaAs heterojunction phototransistor. - Jaroslav Kovác; Jaroslava Skriniarová; Martin Florovic; J. Jakabovic; Jozef Chovan; R. Srnánek; A. Vincze; B. Sciana; D. Radziewicz; Iwona Zborowska-Lindert; M. Tlaczala (Microelectron. J., 2009)

Contactless electroreflectance study of band bending for undoped, Si- and Mg-doped GaN layers and AlGaN/GaN transistor heterostructures. - R. Kudrawiec; M. Motyka; J. Misiewicz; B. Paszkiewicz; R. Paszkiewicz; M. Tlaczala (Microelectron. J., 2009)