N-MOSFET oxide trap characterization induced by nitridation process using RTS noise analysis. - Cédric Leyris; Frédéric Martinez; Alain Hoffmann; M. Valenza; J. C. Vildeuil (Microelectron. Reliab., 2007)

Random telegraph signal: A sensitive and nondestructive tool for gate oxide single trap characterization. - Cédric Leyris; Frédéric Martinez; M. Valenza; Alain Hoffmann; J. C. Vildeuil (Microelectron. Reliab., 2007)

Impact of strained-channel n-MOSFETs with a SiGe virtual substrate on dielectric interface quality evaluated by low frequency noise measurements. - G. Néau; Frédéric Martinez; M. Valenza; J. C. Vildeuil; E. Vincent; Frédéric Boeuf; F. Payet; K. Rochereau (Microelectron. Reliab., 2007)