An easy-to-use mismatch model for the MOS transistor. - Jeroen A. Croon; Maarten Rosmeulen; Stefaan Decoutere; Willy Sansen; Herman E. Maes (IEEE J. Solid State Circuits, 2002)

Characterization of charge trapping in SiO2/Al2O3 dielectric stacks by pulsed C-V technique. - Giuseppina Puzzilli; Bogdan Govoreanu; Fernanda Irrera; Maarten Rosmeulen; Jan Van Houdt (Microelectron. Reliab., 2007)

Development of Gated Pinned Avalanche Photodiode Pixels for High-Speed Low-Light Imaging. - Tomislav Resetar; Koen De Munck; Luc Haspeslagh; Maarten Rosmeulen; Andreas Süss; Robert Puers; Chris Van Hoof (Sensors, 2016)

Analysis and Design of a CMOS Ultra-High-Speed Burst Mode Imager with In-Situ Storage Topology Featuring In-Pixel CDS Amplification. - Lin-Kun Wu; David San Segundo Bello; Philippe Coppejans; Jan Craninckx; Andreas Süss; Maarten Rosmeulen; Piet Wambacq; Jonathan Borremans (Sensors, 2018)

A TCAD Compatible SONOS Trapping Layer Model for Accurate Programming Dynamics. - Franz Schanovsky; Devin Verreck; Antonio Arreghini; Gerhard Rzepa; Zlatan Stanojevic; Christian Kernstock; Oskar Baumgartner; Maarten Rosmeulen; Markus Karner (IMW, 2021)

Reliability of Mo as Word Line Metal in 3D NAND. - Davide Tierno; Kristof Croes; Arjun Ajaykumar; Siva Ramesh; Geert Van den Bosch; Maarten Rosmeulen (IRPS, 2021)

High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction. - Laurent Breuil; L. Nyns; S. Rachidi; K. Banerjee; Antonio Arreghini; J. P. Bastos; S. Ramesh; Geert Van den Bosch; Maarten Rosmeulen (IMW, 2022)

At the Extreme of 3D-NAND Scaling: 25 nm Z-Pitch with 10 nm Word Line Cells. - S. Rachidi; Antonio Arreghini; Devin Verreck; G. L. Donadio; K. Banerjee; K. Katcko; Yusuke Oniki; Geert Van den Bosch; Maarten Rosmeulen (IMW, 2022)

Liquid Memory and the Future of Data Storage. - Maarten Rosmeulen; Cesar J. Lockhart de la Rosa; K. Willems; S. Fransen; B.-Y. Shih; Devin Verreck; V. Kalangi; F. Yasin; Harold Philipsen; Y. T. Set; N. Ronchi; W. Van Roy; et al. (IMW, 2022)

Optimization of Retention in Ferroelectricity Boosted Gate Stacks for 3D NAND. - Laurent Breuil; Mihaela Ioana Popovici; J. Stiers; Antonio Arreghini; S. Ramesh 005; Geert Van den Bosch; Jan Van Houdt; Maarten Rosmeulen (IMW, 2023)

Improved MW of IGZO-channel FeFET by Reading Scheme Optimization and Interfacial Engineering. - Zhuo Chen; Nicolo Ronchi; Amey Walke; Kaustuv Banerjee; Mihaela Ioana Popovici; Kostantine Katcko; Geert Van den Bosch; Maarten Rosmeulen; Valeri Afanas'ev; Jan Van Houdt (IMW, 2023)

Enabling 3D NAND Trench Cells for Scaled Flash Memories. - S. Rachidi; S. Ramesh; Laurent Breuil; Z. Tao; Devin Verreck; G. L. Donadio; Antonio Arreghini; Geert Van den Bosch; Maarten Rosmeulen (IMW, 2023)

A DTCO Framework for 3D NAND Flash Readout. - Mattia Gerardi; Arvind Sharma; Yang Xiang; Jakub Kaczmarek; Fernando García-Redondo; Maarten Rosmeulen; Marie Garcia Bardon (DATE, 2024)

Gate Side Injection Operating Mode for 3D NAND Flash Memories. - Laurent Breuil; R. Izmailov; Mihaela Ioana Popovici; J. Stiers; Antonio Arreghini; S. Ramesh; Geert Van den Bosch; Jan Van Houdt; Maarten Rosmeulen (IMW, 2024)

Pure-Metal Replacement Gate for Reliable 30 nm Pitch Scaled 3D NAND Flash. - S. Rachidi; S. Ramesh; Davide Tierno; G. L. Donadio; A. Pacco; J. W. Maes; Y. Jeong; Antonio Arreghini; Geert Van den Bosch; Maarten Rosmeulen (IMW, 2024)

Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance. - Yusuke Higashi; J. P. Bastos; Adrian Vaisman Chasin; Laurent Breuil; Antonio Arreghini; S. Ramesh; S. Rachidi; Y. Jeong; Geert Van den Bosch; Maarten Rosmeulen (IRPS, 2024)

Exploring the Reliability Limits for the Z-Pitch Scaling of Molybdenum Inter-Word Line Oxides in 3D NAND. - Davide Tierno; Antonio Arreghini; Alicja Lesniewska; Y. Jeong; Marleen H. van der Veen; J. Stiers; N. Bazzazian; Ivan Ciofi; Geert Van den Bosch; Maarten Rosmeulen (IRPS, 2024)

Hole-Side Airgap Integration as Enabler for 3D NAND Flash Z-Pitch Scaling. - S. Rachidi; S. Ramesh; Devin Verreck; J. Loyo; Y. Jeong; H. Puliyalil; Jie Li; F. Seidel; Geert Van Den Bosch; Maarten Rosmeulen (IMW, 2025)

Advanced RTN Analysis on 3D NAND Trench Devices Using Physics-Informed Machine Learning Framework. - Yusuke Higashi; Anirudh Varanasi; Philippe J. Roussel; Pablo Saraza-Canflanca; J. P. Bastos; Alexander Grill; E. Catapano; R. Asanovski; Jacopo Franco; Ben Kaczer; Adrian Chasin; Devin Verreck; et al. (IRPS, 2025)

Framework for Augmenting Main Memory with CXL-connected Emerging Memory Alternatives. - Khakim Akhunov; Dwaipayan Biswas; Emil Karimov; Arvind Sharma; Hyungrock Oh; Maarten Rosmeulen; Julien Ryckaert; James Myers (ISCAS, 2025)

3D IGZO Charge-Coupled Memory DTCO & STCO Analysis for Compute-near-Memory Applications. - Bowen Wang; Khakim Akhunov; Hyungrock Oh; Fernando García-Redondo; Yukai Chen; Arvind Sharma; Jiacong Sun; Sahan Gamage; Maarten Rosmeulen; Swaraj Bandhu Mahato; Rishabh Kishore; Subhali Subhechha; et al. (ISCAS, 2025)