Employing work function enginnering and asymmetric gate oxide in nano-scale source-heterojunction-MOS-transistor. - Mahsa Tahermaram; Mahdi Vadizadeh; A. Eslamzadeh; Morteza Fathipour (EIT, 2009)

Dual material gate nanowire field effect diode (DMG-NWFED): Operating principle and properties. - Mahdi Vadizadeh (Microelectron. J., 2018)