Degradation of n-channel a-Si: H/nc-Si: H bilayer thin-film transistors under DC electrical stress. - N. Arpatzanis; Argyrios T. Hatzopoulos; Dimitrios H. Tassis; C. A. Dimitriadis; François Templier; Maher Oudwan; G. Kamarinos (Microelectron. Reliab., 2008)

Parameter extraction method for universal amorphous silicon thin-film transistors simulation program with integrated circuit emphasis model. - Jong Woo Jin; Maher Oudwan; Dmitri Daineka; Oumkelthoum Moustapha; Yvan Bonnassieux (IET Circuits Devices Syst., 2012)