A quantitative study of Phosphorous implantation damage on the thick gate oxide of the 28 nm node. - Xinggong Wan; Sandhya Chandrashekhar; Boris Bayha; Martin Trentzsch; Torben Balzer; Mahesh Siddabathula; Oliver Aubel (Microelectron. Reliab., 2014)

Alternating Temperature Stress and Deduction of Effective Stress Levels from Mission Profiles for Semiconductor Reliability. - Alexander Hirler; Adnan Alsioufy; Josef Biba; T. Lehndorff; D. Lipp; Helmut Lochner; Mahesh Siddabathula; S. Simon; Torsten Sulima; Maciej Wiatr; Walter Hansch (IRPS, 2019)

A Novel HCI Reliability Model for RF/mmWave Applications in FDSOI Technology. - Wafa Arfaoui; Germain Bossu; A. Muehlhoff; D. Lipp; R. Manuwald; T. Chen; Tanya Nigam; Mahesh Siddabathula (IRPS, 2020)

Off-state TDDB in FinFET Technology and its Implication for Safe Operating Area. - Maria Toledano-Luque; Peter C. Paliwoda; Mohamed Nour; Thomas Kauerauf; Byoung Min; Germain Bossu; Mahesh Siddabathula; Tanya Nigam (IRPS, 2021)

Reliability-Conscious MOSFET Compact Modeling with Focus on the Defect-Screening Effect of Hot-Carrier Injection. - Pratik B. Vyas; Ninad Pimparkar; Robert Tu; Wafa Arfaoui; Germain Bossu; Mahesh Siddabathula; Steffen Lehmann; Jung-Suk Goo; Ali B. Icel (IRPS, 2021)

22FDX™ 5G 28GHz 20dBm Power Amplifier Constant Load and VSWR accelerated aging reliability. - Germain Bossu; Shafi Syed; S. Evseev; Joris Angelo Sundaram Jerome; Wafa Arfaoui; D. Lipp; Mahesh Siddabathula (IRPS, 2022)

A Deeper Understanding of Well Charging Reliability with Circuit Relevant Test Structures. - T. L. Tan; C. W. Eng; H. Xu; J. M. Soon; E. Ebard; Mahesh Siddabathula; B. F. Phoong; K. H. Poh; M. Prabhu; X.-L. Zhao; J. M. Koo; K. Cho; et al. (IRPS, 2022)

Excellent Reliability performances of a truly 5V nBOXFET for Automotive and IOT applications. - D. Lipp; Z. Zhao; G. Krause; Wafa Arfaoui; Elodie Ebrard; Germain Bossu; S. Evseev; Markus Herklotz; Mahesh Siddabathula (IRPS, 2023)