The Origin of Gate Degradation Under HTRB Operation: Buffer Engineering to Suppress Impact Ionization in GaN HEMT. - Mahmut Can Soydan; Amir Ali Joya; Amir Ghobadi; Ekmel Özbay (IEEE Access, 2025)

Effects of Donor Impurities on RF Performance of AlGaN/GaN HEMTs. - Amir Ali Joya; Abdulkadir Gürbüz; Mahmut Can Soydan; Amir Ghobadi; Ekmel Özbay (IEEE Access, 2026)