Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells. - Tarek Ali; Kati Kühnel; Malte Czernohorsky; Matthias Rudolph; Björn Pätzold; Ricardo Olivo; David Lehninger; Konstantin Mertens; Franz Müller 001; Maximilian Lederer; Raik Hoffmann; Clemens Mart; et al. (IRPS, 2020)