Through-Silicon Via (TSV). - Makoto Motoyoshi (Proc. IEEE, 2009)

Stacked SOI pixel detector using versatile fine pitch μ-bump technology. - Makoto Motoyoshi; Junichi Takanohashi; Takafumi Fukushima; Yasuo Arai; Mitsumasa Koyanagi (3DIC, 2011)

3 Dimensional stacked pixel detector and sensor technology using less than 3-μmφ robust bump junctions. - Makoto Motoyoshi; Kohki Yanagimura; Taikoh Fushimi; Junichi Takanohashi; Mariappan Murugesan; Masahiro Aoyagi; Mitsumasa Koyanagi (3DIC, 2016)

Improving the integrity of Ti barrier layer in Cu-TSVs through self-formed TiSix for via-last TSV technology. - Mariappan Murugesan; Jichel Bea; Takafumi Fukushima; Makoto Motoyoshi; Tetsu Tanaka; Mitsumasa Koyanagi (3DIC, 2016)

Stacked Pixel Sensor/Detector Technology using Au Micro-Bump Junction. - Makoto Motoyoshi; Kohki Yanagimura; Taikoh Fushimi; Shunta Endo (3DIC, 2019)

3D Integrated Pixel Sensor with Silicon-on-Insulator Technology for the International Linear Collider Experiment. - Miho Yamada; Shun Ono; Yasuo Arai; Ikuo Kurachi; Toru Tsuboyama; Masayuki Ikebe; Makoto Motoyoshi (3DIC, 2019)

Cu-Cu Direct Bonding Through Highly Oriented Cu Grains for 3D-LSI Applications. - Mariappan Murugesan; E. Sone; A. Simomura; Makoto Motoyoshi; Masahiro Sawa; K. Fukuda; Mitsumasa Koyanagi; Takafumi Fukushima (3DIC, 2021)

Copper Electrode Surface Features and Cu-SiO2Hybrid Bonding. - Mariappan Murugesan; Masahiro Sawa; E. Sone; Makoto Motoyoshi; Mitsumasa Koyanagi; Takafumi Fukushima (3DIC, 2023)