Impact of inside spacer process on fully self-aligned 250 GHz SiGe: C HBTs reliability performances: a-Si vs. nitride. - Malick Diop; Nathalie Revil; M. Marin; Frederic Monsieur; Pascal Chevalier 002; Gérard Ghibaudo (Microelectron. Reliab., 2008)

0.13µm SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications. - Grégory Avenier; Malick Diop; Pascal Chevalier 002; Germaine Troillard; Nicolas Loubet; Julien Bouvier; Linda Depoyan; Nicolas Derrier; Michel Buczko; Cédric Leyris; Samuel Boret; Sébastien Montusclat; et al. (IEEE J. Solid State Circuits, 2009)