Optimization of an Octree-based 3-D Parallel Meshing Algorithm for the Simulation of Small-Feature Semiconductor Devices. - Juan J. Pombo; Manuel Aldegunde; Antonio J. García-Loureiro (PARCO, 2005)

Development of a 3D Parallel Finite Element Monte Carlo Simulator for Nano-MOSFETs. - Manuel Aldegunde; Antonio J. García-Loureiro; Karol Kalna (LSSC, 2007)

The MOSFET Virtual Organisation: Grid Computing for Simulation in Nanoelectronics. - Raúl Valín Ferreiro; Natalia Seoane; Manuel Aldegunde; Antonio J. García-Loureiro (eScience, 2009)

Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes. - Manuel Aldegunde; Natalia Seoane; Antonio J. García-Loureiro; Karol Kalna (Comput. Phys. Commun., 2010)

Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors. - Antonio J. García-Loureiro; Natalia Seoane; Manuel Aldegunde; Raúl Valín Ferreiro; Asen Asenov; Antonio Martinez; Karol Kalna (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2011)

Static multipole method applied to boundary conditions for semiconductor device simulations. - Guillermo Indalecio Fernández; Antonio J. García-Loureiro; Manuel Aldegunde (HPCS, 2012)

Simulation of the spin polarization and the charge transport in Zener tunnel junctions based on ferromagnetic GaAs and ZnO. - Enrique Comesaña; Manuel Aldegunde; Antonio J. García-Loureiro (Comput. Phys. Commun., 2013)

Optimisation and parallelisation of a 2D MOSFET multi-subband ensemble Monte Carlo simulator. - Raúl Valín Ferreiro; Carlos Sampedro 002; Natalia Seoane; Manuel Aldegunde; Antonio J. García-Loureiro; Andres Godoy; Francisco Gámiz (Int. J. High Perform. Comput. Appl., 2013)

Impact of discrete dopants on an ultra-scaled FinFET using quantum transport simulations. - R. Valín; Antonio Martinez; Manuel Aldegunde; John R. Barker (ESSDERC, 2014)

Energy conserving, self-force free Monte Carlo simulations of semiconductor devices on unstructured meshes. - Manuel Aldegunde; Karol Kalna (Comput. Phys. Commun., 2015)

Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold. - Guillermo Indalecio Fernández; Natalia Seoane; Manuel Aldegunde; Karol Kalna; Antonio J. García-Loureiro (J. Low Power Electron., 2015)

Development of an exchange-correlation functional with uncertainty quantification capabilities for density functional theory. - Manuel Aldegunde; James R. Kermode; Nicholas Zabaras (J. Comput. Phys., 2016)

Quantifying uncertainties in first-principles alloy thermodynamics using cluster expansions. - Manuel Aldegunde; Nicholas Zabaras; Jesper Kristensen (J. Comput. Phys., 2016)

Study of strained effects in nanoscale GAA nanowire FETs using 3D Monte Carlo simulations. - Muhammad A. Elmessary; Daniel Nagy; Manuel Aldegunde; Antonio J. García-Loureiro; Karol Kalna (ESSDERC, 2017)