Cost-effective cleaning and high-quality thin gate oxides. - Marc M. Heyns; Twan Bearda; Ingrid Cornelissen; Stefan De Gendt; Robin Degraeve; Guido Groeseneken; Conny Kenens; D. Martin Knotter; Lee M. Loewenstein; Paul W. Mertens; Sofie Mertens; Marc Meuris; et al. (IBM J. Res. Dev., 1999)

In situ crystallisation in ZrO2 thin films during high temperature X-ray diffraction. - Chao Zhao; Gert Roebben; Hugo Bender; Edward Young; S. Haukka; Michel Houssa; Mohamed Naili; Stefan De Gendt; Marc M. Heyns; Omer Van der Biest (Microelectron. Reliab., 2001)

Modelling mobility degradation due to remote Coulomb scattering from dielectric charges and its impact on MOS device performance. - G. S. Lujan; Wim Magnus; L.-Å. Ragnarsson; Stefan Kubicek; Stefan De Gendt; Marc M. Heyns; Kristin De Meyer (Microelectron. Reliab., 2005)

Negative bias temperature instabilities in HfSiO(N)-based MOSFETs: Electrical characterization and modeling. - M. Houssa; Marc Aoulaiche; Stefan De Gendt; Guido Groeseneken; Marc M. Heyns (Microelectron. Reliab., 2007)

Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications. - Jacopo Franco; Ben Kaczer; Jérôme Mitard; Maria Toledano-Luque; Felice Crupi; Geert Eneman; Ph. J. Rousse; Tibor Grasser; M. Cho; Thomas Kauerauf; Liesbeth Witters; Geert Hellings; et al. (ICICDT, 2012)

The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices. - Abhitosh Vais; Koen Martens; Jacopo Franco; Dennis Lin; AliReza Alian; Philippe Roussel; S. Sioncke; Nadine Collaert; Aaron Thean; Marc M. Heyns; Guido Groeseneken; Kristin De Meyer (IRPS, 2015)

Effect of material parameters on two-dimensional materials based TFETs: An energy-delay perspective. - Tarun Agarwal; Iuliana P. Radu; Praveen Raghavan; Gianluca Fiori; Aaron Thean; Marc M. Heyns; Wim Dehaene (ESSCIRC, 2016)

Material selection and device design guidelines for two-dimensional materials based TFETs. - Tarun Agarwal; Bart Soree; Iuliana P. Radu; Praveen Raghavan; Gianluca Fiori; Marc M. Heyns; Wim Dehaene (ESSDERC, 2017)

Reconfigurable nanoscale spin wave majority gate with frequency-division multiplexing. - Giacomo Talmelli; Thibaut Devolder; Nick Träger; Johannes Förster; Sebastian Wintz; Markus Weigand; Hermann Stoll; Marc M. Heyns; Gisela Schütz; Iuliana P. Radu; Joachim Gräfe; Florin Ciubotaru; et al. (CoRR, 2019)

Insight to Data Retention loss in ferroelectric Hf0.5Zr0.5O2 pFET and nFET from simultaneous PV and IV measurements. - Md Nur K. Alam; Yusuke Higashi; Brecht Truijen; Ben Kaczer; Mihaela Ioana Popovici; Bj O'Sullivan; Philippe Roussel; Robin Degraeve; Marc M. Heyns; Jan Van Houdt (VLSI Technology and Circuits, 2022)

Transition-state-theory-based interpretation of Landau double well potential for ferroelectrics. - Md Nur K. Alam; Sergiu Clima; Ben Kaczer; Philippe Roussel; Brecht Truijen; Lars-Åke Ragnarsson; N. Horiguchi; Marc M. Heyns; Jan Van Houdt (CoRR, 2024)