Characterising the surface roughness of AFM grown SiO2 on Si. - Daniel Hill; X. Blasco; Marc Porti; Montserrat Nafría; Xavier Aymerich (Microelectron. Reliab., 2001)

Local current fluctuations before and after breakdown of thin SiO2 films observed with conductive atomic force microscope. - Marc Porti; X. Blasco; Montserrat Nafría; Xavier Aymerich; Alexander Olbrich; Bernd Ebersberger (Microelectron. Reliab., 2001)

Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO2 films. - Rosana Rodríguez; Marc Porti; Montserrat Nafría; Xavier Aymerich (Microelectron. Reliab., 2001)

Pre-breakdown noise in electrically stressed thin SiO2 layers of MOS devices observed with C-AFM. - Marc Porti; S. Meli; Montserrat Nafría; Xavier Aymerich (Microelectron. Reliab., 2003)

Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM. - Marc Porti; Montserrat Nafría; Xavier Aymerich (Microelectron. Reliab., 2003)

Standard and C-AFM tests to study the post-BD gate oxide conduction of MOS devices after current limited stresses. - Marc Porti; S. Meli; Montserrat Nafría; Xavier Aymerich (Microelectron. Reliab., 2004)

Pre- and post-BD electrical conduction of stressed HfO2/SiO2 MOS gate stacks observed at the nanoscale. - Lidia Aguilera; Marc Porti; Montserrat Nafría; Xavier Aymerich (Microelectron. Reliab., 2005)

Influence of the manufacturing process on the electrical properties of thin (k stacks observed with CAFM. - Mario Lanza; Marc Porti; Montserrat Nafría; Guenther Benstetter; Werner Frammelsberger; Heiko Ranzinger; E. Lodermeier; G. Jaschke (Microelectron. Reliab., 2007)

Nanometer-scale leakage measurements in high vacuum on de-processed high-k capacitors. - W. Polspoel; Wilfried Vandervorst; Lidia Aguilera; Marc Porti; Montserrat Nafría; Xavier Aymerich (Microelectron. Reliab., 2008)

Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale. - Mario Lanza; Marc Porti; Montserrat Nafría; Xavier Aymerich; G. Ghidini; A. Sebastiani (Microelectron. Reliab., 2009)

UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements. - Mario Lanza; Marc Porti; Montserrat Nafría; Xavier Aymerich; E. Whittaker; B. Hamilton (Microelectron. Reliab., 2010)

Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO2/Pt structures. - Violaine Iglesias 002; Mario Lanza; Albin Bayerl; Marc Porti; Montserrat Nafría; Xavier Aymerich; Lifeng Liu; Jinfeng Kang; Gennadi Bersuker; Kai Zhang; Ziyong Shen (Microelectron. Reliab., 2012)

Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors. - Albin Bayerl; Mario Lanza; Lidia Aguilera; Marc Porti; Montserrat Nafría; Xavier Aymerich; Stefan De Gendt (Microelectron. Reliab., 2013)

Threshold voltage and on-current Variability related to interface traps spatial distribution. - V. Velayudhan; Javier Martín-Martínez; Marc Porti; Carlos Couso; Rosana Rodríguez; Montserrat Nafría; Xavier Aymerich; Carlos Marquez; Francisco Gámiz (ESSDERC, 2015)

Threading dislocations in III-V semiconductors: Analysis of electrical conduction. - Violaine Iglesias 002; Marc Porti; Carlos Couso; Q. Wu; S. Claramunt; Montserrat Nafría; Enrique Miranda 002; Neus Domingo; Gennadi Bersuker; Aaron Cordes (IRPS, 2015)

Analysis of Body Bias and RTN-Induced Frequency Shift of Low Voltage Ring Oscillators in FDSOI Technology. - Enrique Barajas; Xavier Aragonès; Diego Mateo; Francesc Moll; Antonio Rubio 001; Javier Martín-Martínez; Rosana Rodríguez; Marc Porti; Montserrat Nafría; Rafael Castro-López; Elisenda Roca; Francisco V. Fernández 001 (PATMOS, 2018)

Methodology for the Simulation of the Variability of MOSFETs With Polycrystalline High-k Dielectrics Using CAFM Input Data. - Ana Ruiz; Carlos Couso; Natalia Seoane; Marc Porti; Antonio J. García-Loureiro; Montserrat Nafría (IEEE Access, 2021)

Towards a Reliable PUF Using Organic Thin-Film Transistors. - F. de Los Santos-Prieto; Deborah Eric; Marc Porti; Rafael Castro-López; Elisenda Roca; Francisco V. Fernández 001; Montserrat Nafría (SMACD, 2025)

Reliability Assessment of Optical Physical Unclonable Functions Based on the Spatial Distribution of Catastrophic Failure Sites in MIM Structures. - Marc Porti; Alvaro Solis; Alex Calatayud; Montserrat Nafría; Enrique Miranda 002 (IEEE Access, 2025)