Simulation and Experimental Validation of Scanning Capacitance Microscopy Measurements across Low-doped Epitaxial PN-Junction. - Maria Stangoni; Mauro Ciappa; Marco Buzzo; Markus Leicht; Wolfgang Fichtner (Microelectron. Reliab., 2002)

2D Dopant Profiling on 4H Silicon Carbide P+N Junction by Scanning Capacitance and Scanning Electron Microscopy. - Marco Buzzo; Markus Leicht; Thomas Schweinböck; Mauro Ciappa; Maria Stangoni; Wolfgang Fichtner (Microelectron. Reliab., 2004)

New trends in the application of Scanning Probe Techniques in Failure Analysis. - Thomas Schweinböck; S. Schömann; D. Álvarez; Marco Buzzo; Werner Frammelsberger; Peter Breitschopf; Günther Benstetter (Microelectron. Reliab., 2004)

Two-dimensional Dopant Profiling and Imaging of 4H Silicon Carbide Devices by Secondary Electron Potential Contrast. - Marco Buzzo; Mauro Ciappa; Maria Stangoni; Wolfgang Fichtner (Microelectron. Reliab., 2005)

Characterization of photonic devices by secondary electron potential contrast. - Marco Buzzo; Mauro Ciappa; Wolfgang Fichtner (Microelectron. Reliab., 2006)