Physical modeling of the hysteresis in M0S2 transistors. - Theresia Knobloch; Gerhard Rzepa; Yury Yu. Illarionov; Michael Waltl; Franz Schanovsky; Markus Jech; Bernhard Stampfer; Marco M. Furchi; Thomas Muller; Tibor Grasser (ESSDERC, 2017)

Reliability of next-generation field-effect transistors with transition metal dichalcogenides. - Yury Yu. Illarionov; Aday J. Molina-Mendoza; Michael Waltl; Theresia Knobloch; Marco M. Furchi; Thomas Mueller; Tibor Grasser (IRPS, 2018)