Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects. - Marco Saro; Francesco de Pieri; Andrea Carlotto; Mirko Fornasier; Fabiana Rampazzo; Carlo De Santi; Gaudenzio Meneghesso; Matteo Meneghini; Enrico Zanoni; Davide Bisi; Matthew Guidry; Stacia Keller; et al. (IRPS, 2024)

Comprehensive Analysis of Deep level Effects and in-situ Photoionization in 0.15 $ mu mathrm{m}$ buffer-free AIGaN/GaN HEMTs for RF applications. - Francesco de Pieri; Manuel Fregolent; Marco Saro; Andrea Carlotto; Mirco Boito; Carlo De Santi; Fabiana Rampazzo; Gaudenzio Meneghesso; Matteo Meneghini; Enrico Zanoni (IRPS, 2025)