Experimental Verification of Memristor-Based Material Implication NAND Operation. - Marcos Maestro-Izquierdo; Javier Martín-Martínez; Albert Crespo-Yepes; Manel Escudero; Rosana Rodríguez; Montserrat Nafría; Xavier Aymerich; Antonio Rubio 001 (IEEE Trans. Emerg. Top. Comput., 2019)

Impact of Intrinsic Series Resistance on the Reversible Dielectric Breakdown Kinetics in HfO2 Memristors. - Mireia Bargallo González; Marcos Maestro-Izquierdo; Francesca Campabadal; Samuel Aldana; Francisco Jiménez-Molinos; Juan Bautista Roldán (IRPS, 2020)