Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis. - Isabella Rossetto; Matteo Meneghini; Vanessa Rizzato; Maria Ruzzarin; Andrea Favaron; Steve Stoffels; Marleen Van Hove; Niels Posthuma; Tian-Li Wu; Denis Marcon; Stefaan Decoutere; Gaudenzio Meneghesso; et al. (Microelectron. Reliab., 2016)

Degradation of vertical GaN FETs under gate and drain stress. - Maria Ruzzarin; Matteo Meneghini; Carlo De Santi; Gaudenzio Meneghesso; Enrico Zanoni; Min Sun; Tomás Palacios (IRPS, 2018)

Positive and negative threshold voltage instabilities in GaN-based transistors. - Gaudenzio Meneghesso; Matteo Meneghini; Carlo De Santi; Maria Ruzzarin; Enrico Zanoni (Microelectron. Reliab., 2018)

Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments. - Maria Ruzzarin; Matteo Meneghini; Carlo De Santi; Min Sun; Tomás Palacios; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2018)

Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs). - Maria Ruzzarin; Matteo Borga; Enrico Zanoni; Matteo Meneghini; Gaudenzio Meneghesso; Dong Ji; Wenwen Li; Silvia H. Chan; Anchal Agarwal; Chirag Gupta; Stacia Keller; Umesh K. Mishra; et al. (IRPS, 2019)