The electron irradiation effects on silicon gate dioxide used for power MOS devices. - Marian Badila; Philippe Godignon; José Millán; S. Berberich; Gheorghe Brezeanu (Microelectron. Reliab., 2001)

400 °C Sensor Based on Ni/4H-SiC Schottky Diode for Reliable Temperature Monitoring in Industrial Environments. - Florin Draghici; Gheorghe Brezeanu; Gheorghe Pristavu; Razvan Pascu; Marian Badila; Adriana Pribeanu; Emilian Ceuca (Sensors, 2019)