Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure. - Clemens Ostermaier; Peter Lagger; Mohammed Alomari; Patrick Herfurth; David Maier 002; Alexander Alexewicz; Marie-Antoinette di Forte-Poisson; Sylvain L. Delage; Gottfried Strasser; Dionyz Pogany; Erhard Kohn (Microelectron. Reliab., 2012)

Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences. - Isabella Rossetto; Fabiana Rampazzo; Simone Gerardin; Matteo Meneghini; Marta Bagatin; Alberto Zanandrea; Alessandro Paccagnella; Gaudenzio Meneghesso; Enrico Zanoni; Christian Dua; Marie-Antoinette di Forte-Poisson; Raphael Aubry; et al. (ESSDERC, 2014)

Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs. - Isabella Rossetto; Fabiana Rampazzo; Matteo Meneghini; Marco Silvestri; Christian Dua; Piero Gamarra; Raphael Aubry; Marie-Antoinette di Forte-Poisson; O. Patard; Sylvain L. Delage; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2014)

Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs. - Davide Bisi; Antonio Stocco; Isabella Rossetto; Matteo Meneghini; Fabiana Rampazzo; Alessandro Chini; Fabio Soci; Alessio Pantellini; Claudio Lanzieri; Piero Gamarra; Cedric Lacam; M. Tordjman; et al. (Microelectron. Reliab., 2015)