0.3pA Dark Current and 0.65A/W Responsivity 1020nm InGaAs/GaAs Nano-Ridge Waveguide Photodetector Monolithically Integrated on a 300-mm Si Wafer. - Cenk Ibrahim Ozdemir; Yannick de Koninck; Didit Yudistira; Nadezda Kuznetsova; Marina Baryshnikova; Dries Van Thourhout; Bernardette Kunert; Marianna Pantouvaki; Joris Van Campenhout (ECOC, 2020)

III-V HBTs on 300 mm Si substrates using merged nano-ridges and its application in the study of impact of defects on DC and RF performance. - Abhitosh Vais; Sachin Yadav 001; Yves Mols; Bjorn Vermeersch; Komal Vondkar Kodandarama; Marina Baryshnikova; G. Mannaert; R. Alcotte; Geert Boccardi; Piet Wambacq; Bertrand Parvais; R. Langer; et al. (ESSDERC, 2022)

Wafer-Level Aging of InGaAs/GaAs Nano-Ridge p-i-n Diodes Monolithically Integrated on Silicon. - Ping-Yi Hsieh; Artemisia Tsiara; Barry J. O'Sullivan; Didit Yudistira; Marina Baryshnikova; Guido Groeseneken; Bernardette Kunert; Marianna Pantouvaki; Joris Van Campenhout; Ingrid De Wolf (IRPS, 2022)