A 1 × 400 Backside-Illuminated SPAD Sensor With 49.7 ps Resolution, 30 pJ/Sample TDCs Fabricated in 3D CMOS Technology for Near-Infrared Optical Tomography. - Juan Mata Pavia; Mario Scandini; Scott Lindner; Martin Wolf; Edoardo Charbon (IEEE J. Solid State Circuits, 2015)