Negative bias instability in 4H-SiC MOSFETS: Evidence for structural changes in the SiC. - Mark A. Anders 002; Patrick M. Lenahan; Aivars J. Lelis (IRPS, 2015)

Bias temperature instabilities in 4H SiC metal oxide semiconductor field effect transistors: Insight provided by electrically detected magnetic resonance. - Patrick M. Lenahan; Mark A. Anders 002; R. J. Waskiewicz; Aivars J. Lelis (Microelectron. Reliab., 2018)

Reliability and Performance Issues in SiC MOSFETs: Insight Provided by Spin Dependent Recombination. - James P. Ashton; Patrick M. Lenahan; Daniel J. Lichtenwalner; Aivars J. Lelis; Mark A. Anders 002 (IRPS, 2019)

Near Zero Field Magnetoresistance Spectroscopy: A New Tool in Semiconductor Reliability Physics. - Patrick M. Lenahan; E. B. Frantz; Sean W. King; Mark A. Anders 002; S. J. Moxim; James P. Ashton; Kyle J. Myers; M. E. Flatté; N. J. Harmon (IRPS, 2023)