The control of size and areal density of InAs self-assembled quantum dots in selective area molecular beam epitaxy on GaAs (001) surface. - J. C. Lin; P. W. Fry; Richard A. Hogg; Mark Hopkinson; Ian Mark Ross; A. G. Cullis; R. S. Kolodka; A. I. Tartakovskii; M. S. Skolnick (Microelectron. J., 2006)

Photoluminescence beyond 1.5mum from InAs quantum dots. - Jo Shien Ng; H. Y. Liu; M. J. Steer; Mark Hopkinson; J. P. R. David (Microelectron. J., 2006)

Empirical bond order potential calculations of the elastic properties of epitaxial InGaSbAs layers. - Vesel Haxha; Raman Garg; Max A. Migliorato; I. W. Drouzas; José María Ulloa; P. M. Koenraad; M. J. Steer; H. Y. Liu; Mark Hopkinson; D. J. Mowbray (Microelectron. J., 2009)

Maximising performance of optical coherence tomography systems using a multi-section chirped quantum dot superluminescent diode. - P. D. L. Judson; K. M. Groom; D. T. D. Childs; Mark Hopkinson; Nikola Krstajic; Richard A. Hogg (Microelectron. J., 2009)

Electric field effects on the carrier migration in self-assembled InAs/GaAs quantum dots. - F. A. M. Marques; A. F. G. Monte; Mark Hopkinson (Microelectron. J., 2009)

Investigations on photocurrent bi-stability of a two-color mode-locked quantum dot laser. - Stefan Breuer; Mattia Rossetti; Lukas Drzewietzki; Ivo Montrosset; Michel Krakowski; Mark Hopkinson; Wolfgang Elsäßer (ICTON, 2014)