The Impact of Substrates on the Performance of Top-Gate p-Ga203 Field-Effect Transistors: Record High Drain Current of 980 mA/mm on Diamond. - Jinhyun Noh; Mengwei Si; Hong Zhou; Marko J. Tadjer; Peide D. Ye (DRC, 2018)

Thermal Performance Improvement of GaN-on-Diamond High Electron Mobility Transistors. - Marko J. Tadjer; Travis J. Anderson; James C. Gallagher; Peter E. Raad; Pavel L. Komarov; Andrew D. Koehler; Karl D. Hobart; Fritz J. Kub (DRC, 2018)

2.3 kV Field-Plated Vertical Ga2O3 Schottky Rectifiers and 1 a Forward Current with 650 V Reverse Breakdown Ga2O3 Field-Plated Schottky Barrier Diodes. - Jiancheng Yang; Fan Ren; Marko J. Tadjer; Stephen J. Pearton; Akita Kuramata (DRC, 2018)

Diamond Superjunction (SJ) Process Development: Super-Lattice Power Amplifier with Diamond Enhanced Superjunction (SPADES). - Shamima Afroz; Virginia Wheeler; Marko J. Tadjer; James C. Gallagher; Geoffrey Foster; Karl D. Hobart; Brian Novak; Ken A. Nagamatsu; Kevin Frey; Patrick Shea; Rob Howell; Josephine Chang; et al. (BCICTS, 2019)

Effects of Thermal Boundary Resistance on the Thermal Performance of GaN HEMT on Diamond. - Assaad El Helou; Marko J. Tadjer; Karl D. Hobart; Peter E. Raad (IRPS, 2020)

Operation Up to 600K of Vertical β-Ga2O3 Schottky Rectifier With 754V Reverse Breakdown Voltage. - Xinyi Xia; Minghan Xian; Patrick Carey; Chaker Fares; Fan Ren; Marko J. Tadjer; Steve J. Pearton; Thieu Quang Tu; Ken Goto; Akito Kuramata (DRC, 2021)

AlN-capped P-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors for near-junction thermal management of next generation power devices. - James Spencer Lundh; Hannah N. Masten; Kohei Sasaki; Alan G. Jacobs; Zhe Cheng; Joseph Spencer; Lei Chen; James C. Gallagher; Andrew D. Koehler; Keita Konishi; Samuel Graham; Akito Kuramata; et al. (DRC, 2022)