High-K Gate Dielectric GaN MOS-HEMTs with Regrown n+ InGaN Source/Drain (Invited Paper). - Han Wui Then; Sansaptak Dasgupta; Marko Radosavljevic; Sanaz Gardner; Seung-Hoon Sung; Paul Fischer (DRC, 2019)

A 32A 5V-Input, 94.2% Peak Efficiency High-Frequency Power Converter Module Featuring Package-Integrated Low-Voltage GaN NMOS Power Transistors. - Nachiket V. Desai; Harish K. Krishnamurthy; William J. Lambert; Jingshu Yu; Han Wui Then; Nicolas Butzen; Sheldon Weng; Christopher Schaef; N. Nidhi; Marko Radosavljevic; Johann Rode; Justin Sandford; et al. (VLSI Circuits, 2021)

A Fully Integrated 3.2-4.7GHz Doherty Power Amplifier in 300mm GaN-on-Si Technology. - Qiang Yu; Derek Thomson; Han Wui Then; Alvaro Latorre-Rey; Marko Radosavljevic; Michael Beumer; Pratik Koirala; Nicole Thomas; Nityan Nair; Heli Vora; Samuel Bader; Said Rami (BCICTS, 2022)

5G mmWave Power Amplifier and Low-Noise Amplifier in 300mm GaN-on-Si Technology. - Qiang Yu; Han Wui Then; Derek Thomson; Jessica C. Chou; Jeffrey Garrett; Iwen Huang; Ibukunoluwa Momson; Surej Ravikumar; Seahee Hwangbo; Alvaro Latorre-Rey; Ananda Roy; Marko Radosavljevic; et al. (VLSI Technology and Circuits, 2022)

Design kit development on a 300mm GaN-on-Si demonstration platform with integrated Si pMOS. - Samuel James Bader; Ahmad Zubair; Alvaro Latorre-Rey; Mikkel Hansen; Soumen Sarkar; Abdul Asif; Dimitri Frolov; Kaushik Narayanan; Jag Rangaswamy; Puneet Kanwar Kaur; Sanjeev Kumar; Nirmal Kundu; et al. (BCICTS, 2024)

PBTI in Scaled Oxide Submicron Enhancement Mode High-K Gallium Nitride Transistors. - Soumitra Joy; Kaustubh Joshi 003; Ahmad Zubair; Samuel Bader; Jason Peck; Michael Beumer; Pratik Koirala; Marko Radosavljevic; Heli Vora; Inanc Meric; Han Wui Then (IRPS, 2024)