A 0.13 µm SiGe BiCMOS Technology Featuring fT/fmax of 240/330 GHz and Gate Delays Below 3 ps. - Holger Rücker; Bernd Heinemann; Wolfgang Winkler; Rainer Barth; Johannes Borngräber; Jürgen Drews; Gerhard G. Fischer; Alexander Fox; Thomas Grabolla; Ulrich Haak; Dieter Knoll; Falk Korndörfer; et al. (IEEE J. Solid State Circuits, 2010)

One-Transistor-Multiple-RRAM Cells for Energy-Efficient In-Memory Computing. - Max Uhlmann; Emilio Pérez-Bosch Quesada; Markus Fritscher; Eduardo Pérez; Markus Andreas Schubert; Marc Reichenbach; Philip Ostrovskyy; Christian Wenger; Gerhard Kahmen (NEWCAS, 2023)

Area-Efficient Digital Design Using RRAM-CMOS Standard Cells. - Markus Fritscher; Max Uhlmann; Philip Ostrovskyy; Daniel Reiser; Junchao Chen 001; Markus Andreas Schubert; Carsten Schulze; Gerhard Kahmen; Dietmar Fey; Marc Reichenbach; Milos Krstic; Christian Wenger (ISVLSI, 2024)