A reliable course of Scanning Capacitance Microscopy analysis applied for 2D-Dopant Profilings of Power MOSFET Devices. - Markus Leicht; G. Fritzer; B. Basnar; S. Golka; Jürgen Smoliner (Microelectron. Reliab., 2001)

Simulation and Experimental Validation of Scanning Capacitance Microscopy Measurements across Low-doped Epitaxial PN-Junction. - Maria Stangoni; Mauro Ciappa; Marco Buzzo; Markus Leicht; Wolfgang Fichtner (Microelectron. Reliab., 2002)

2D Dopant Profiling on 4H Silicon Carbide P+N Junction by Scanning Capacitance and Scanning Electron Microscopy. - Marco Buzzo; Markus Leicht; Thomas Schweinböck; Mauro Ciappa; Maria Stangoni; Wolfgang Fichtner (Microelectron. Reliab., 2004)