A compact test structure for characterisation of leakage currents in sub-micron CMOS technologies. - Zhenqiu Ning; Yuri Sneyders; Wim Vanderbauwhede; Renaud Gillon; Marnix Tack; Paul Raes (Microelectron. Reliab., 2001)

Next Generation Smart Power Technologies - Challenges and Innovations Enabling Complex SoC Integration. - Marnix Tack; Peter Moens; Renaud Gillon; Johan Janssens; Stefan Van Roeyen; Jan Sevenhans (ISSCC, 2008)

Electro-thermal characterization and simulation of integrated multi-trenched XtreMOSTM power devices. - J. Rhayem; B. Besbes; Raul Blecic; Sergey Bychikhin; Georg Haberfehlner; Dionyz Pogany; B. Desoete; Renaud Gillon; Aarnout Wieers; Marnix Tack (Microelectron. J., 2012)

Technology and design of GaN power devices. - Peter Moens; Abhishek Banerjee 003; P. Coppens; Aurore Constant; Piet Vanmeerbeek; Z. Li; F. Declercq; L. De Schepper; H. De Vleeschouwer; C. Liu; B. Padmanabhan; W. Jeon; et al. (ESSDERC, 2015)

Short-Circuit Study in Medium-Voltage GaN Cascodes, p-GaN HEMTs, and GaN MISHEMTs. - Manuel Fernandez; Xavier Perpiñà; Jaume Roig-Guitart; Miquel Vellvehí; Filip Bauwens; Marnix Tack; Xavier Jordà (IEEE Trans. Ind. Electron., 2017)

$ mathrm{R}_{ text{ON}}$ and $ mathrm{V}_{ text{TH}}$ Extraction in Hard-Switched E-mode GaN HEMTs: Impact of Passivation and Layout. - Davide Favero; Carlo De Santi; Arno Stockman; Arianna Nardo; Piet Vanmeerbeek; Marnix Tack; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2024)

Vth and Ron Instability of GaN Power HEMTs with pGaN Gate Under Negative Gate Bias. - S. L. Longato; Davide Favero; Arno Stockman; Arianna Nardo; Piet Vanmeerbeek; Marnix Tack; Gaudenzio Meneghesso; Enrico Zanoni; C. De Santi; Matteo Meneghini (IRPS, 2025)