Dynamic avalanche and reliability of high voltage diodes. - Josef Lutz; Martin Domeij (Microelectron. Reliab., 2003)

Is there a perfect SiC MosFETs Device on an imperfect crystal? - Thomas Neyer; Martin Domeij; Hrishikesh Das; Swapna Sunkari (IRPS, 2021)

The Concept of Safe Operating Area for Gate Dielectrics: the SiC/SiO2 Case Study. - Peter Moens; F. Geenen; L. De Schepper; JF Cano; J. Lettens; S. Maslougkas; J. Franchi; Martin Domeij (IRPS, 2023)