A 220-mm2, four- and eight-bank, 256-Mb SDRAM with single-sided stitched WL architecture. - Toshiaki Kirihata; Martin Gall; Kohji Hosokawa; Jean-Marc Dortu; Hing Wong; Peter Pfefferl; Brian L. Ji; Oliver Weinfurtner; John K. DeBrosse; Hartmud Terletzki; Manfred Selz; Wayne Ellis; et al. (IEEE J. Solid State Circuits, 1998)

A Methodology for Chip-Level Electromigration Risk Assessment and Product Qualification. - Chanhee Oh; Haldun Haznedar; Martin Gall; Amir Grinshpon; Vladimir Zolotov; Pon Sung Ku; Rajendran Panda (ISQED, 2004)

Impact of stress-induced backflow on full-chip electromigration risk assessment. - Haldun Haznedar; Martin Gall; Vladimir Zolotov; Pon Sung Ku; Chanhee Oh; Rajendran Panda (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2006)

Empirical BEOL-TDDB evaluation based on I(t)-trace analysis. - Oliver Aubel; Armand Beyer; Georg Talut; Martin Gall (Microelectron. Reliab., 2014)

Advanced methods for mechanical and structural characterization of nanoscale materials for 3D IC integration. - Christoph Sander; Yvonne Standke; Sven Niese; Rüdiger Rosenkranz; André Clausner; Martin Gall; Ehrenfried Zschech (Microelectron. Reliab., 2014)

Prediction of SRAM Reliability Under Mechanical Stress Induced by Harsh En§ironments. - Jens Warmuth; Kay-Uwe Giering; André Lange; André Clausner; Simon Schlipf; Gottfried Kurz; Michael Otto 003; Jens Paul; Roland Jancke; Andreas Aal; Martin Gall; Ehrenfried Zschech (ESSDERC, 2018)

Analysis of 28 nm SRAM cell stability under mechanical load applied by nanoindentation. - André Clausner; Simon Schlipf; Gottfried Kurz; Michael Otto 003; Jens Paul; Kay-Uwe Giering; Jens Warmuth; André Lange; Roland Jancke; Andreas Aal; Rüdiger Rosenkranz; Martin Gall; et al. (IRPS, 2018)

Analysis of electromigration-induced backflow stresses in Cu(Mn) interconnects using high statistical sampling. - Matthias Kraatz; Christoph Sander; André Clausner; Meike Hauschildt; Yvonne Standke; Martin Gall; Ehrenfried Zschech (IRPS, 2018)

RF Reliability of SOI-based Power Amplifier FETs for mmWave 5G Applications. - P. Srinivasan 002; Fernando Guarin; Shafi Syed; Joris Angelo Sundaram Jerome; Wen Liu; Sameer H. Jain; Dimitri Lederer; Stephen Moss; Paul Colestock; Anirban Bandyopadhyay; Ned Cahoon; Byoung Min; et al. (IRPS, 2021)

Strategy to Characterize Electromigration Short Length Effects in Cu/low-k Interconnects. - Zhenjun Zhang; Matthias Kraatz; Meike Hauschildt; Seungman Choi; André Clausner; Ehrenfried Zschech; Martin Gall (IRPS, 2021)

RF long term aging behavior and reliability in 22FDX WiFi Power Amplifier designs for 5G applications. - P. Srinivasan 002; J. Lestage; Shafi Syed; X. Hui; Stephen Moss; Oscar D. Restrepo; Oscar H. Gonzalez; Y. Chen; T. McKay; Anirban Bandyopadhyay; Ned Cahoon; Fernando Guarin; et al. (IRPS, 2023)

Self-aligned Fiber Attach on Monolithic Silicon Photonic Chips: Moisture Effect and Hermetic Seal. - Zhuo-Jie Wu; Ping-Chuan Wang; Seungman Choi; Patrick Justison; Martin Gall; Jae Kyu Cho; Takako Hirokawa; Yusheng Bian; Thomas Houghton; Vaishnavi Karra; Dan Moy; Karen Nummy; et al. (OFC, 2023)

A Novel Method for the Determination of Electromigration-Induced Void Nucleation Stresses. - J. Shuster-Passage; S. Abdel Razek; M. Mattoo; Meike Hauschildt; Seungman Choi; Martin Gall; Armen Kteyan; Jun-Ho Choy; Valeriy Sukharev; Matthias Kraatz; J. R. Lloyd (IRPS, 2024)

Thermal Considerations on RF Reliability and Aging in SOI CMOS Based Power Amplifiers. - P. Srinivasan 002; Oscar H. Gonzalez; Oscar D. Restrepo; J. Lestage; Shafi Syed; W. Taylor; Anirban Bandyopadhyay; Martin Gall; S. Ludvik (IRPS, 2024)

A Unified Physics-Based Stochastic Model for EM-Induced Resistance Degradation in BEoL Interconnect Segments. - Valeriy Sukharev; Jun-Ho Choy; Armen Kteyan; J. Shuster-Passage; Seungman Choi; Martin Gall (IRPS, 2024)