Quality assessment of thin oxides using constant and ramped stress measurements. - Gunnar Diestel; Andreas Martin 002; Martin Kerber; Alfred Schlemm; Horst Erlenmaier; Bernhard Murr; Andreas Preussger (Microelectron. Reliab., 2001)

The influence of p-polysilicon gate doping on the dielectric breakdown of PMOS devices. - G. Innertsberger; T. Pompl; Martin Kerber (Microelectron. Reliab., 2001)

Soft breakdown and hard breakdown in ultra-thin oxides. - T. Pompl; C. Engel; H. Wurzer; Martin Kerber (Microelectron. Reliab., 2001)

Ultra-thick gate oxides: charge generation and its impact on reliability. - Udo Schwalke; Martin Pölzl; Thomas Sekinger; Martin Kerber (Microelectron. Reliab., 2001)

Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides. - T. Pompl; A. Kerber; M. Röhner; Martin Kerber (Microelectron. Reliab., 2006)

Reliability aspects of Hf-based capacitors: Breakdown and trapping effects. - Rainer Duschl; Martin Kerber; A. Avellan; S. Jakschik; Uwe Schroeder; S. Kudelka (Microelectron. Reliab., 2007)

Reliability screening of high-k dielectrics based on voltage ramp stress. - A. Kerber; Luigi Pantisano; Anabela Veloso; Guido Groeseneken; Martin Kerber (Microelectron. Reliab., 2007)

Reliability aspects of copper metallization and interconnect technology for power devices. - Frank Hille; Roman Roth; Carsten Schäffer; Holger Schulze; Nicolas Heuck; Daniel Bolowski; Karsten Guth; Alexander Ciliox; Karina Rott; Frank Umbach; Martin Kerber (Microelectron. Reliab., 2016)