AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes. - Martin Kuball; Milan Tapajna; Richard J. T. Simms; Mustapha Faqir; Umesh K. Mishra (Microelectron. Reliab., 2011)

Improved thermal management for GaN power electronics: Silver diamond composite packages. - Mustapha Faqir; Tim Batten; T. Mrotzek; S. Knippscheer; M. Massiot; M. Buchta; Hervé Blanck; Stéphane Rochette; Olivier Vendier; Martin Kuball (Microelectron. Reliab., 2012)

The role of surface barrier oxidation on AlGaN/GaN HEMTs reliability. - Milan Tapajna; Nicole Killat; Uttiya Chowdhury; Jose L. Jimenez; Martin Kuball (Microelectron. Reliab., 2012)

Liquid crystal electrography: Electric field mapping and detection of peak electric field strength in AlGaN/GaN high electron mobility transistors. - Janina Möreke; Chris Hodges; Laura L. E. Mears; Michael J. Uren; Robert M. Richardson; Martin Kuball (Microelectron. Reliab., 2014)

Implications of gate-edge electric field in AlGaN/GaN high electron mobility transistors during OFF-state degradation. - Huarui Sun; Miguel Montes Bajo; Michael J. Uren; Martin Kuball (Microelectron. Reliab., 2014)

Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence. - Tommaso Brazzini; Michael A. Casbon; Huarui Sun; Michael J. Uren; Jonathan Lees; Paul J. Tasker; Helmut Jung; Hervé Blanck; Martin Kuball (Microelectron. Reliab., 2015)

Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing. - James W. Pomeroy; Michael J. Uren; Benoit Lambert; Martin Kuball (Microelectron. Reliab., 2015)

Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaN/GaN-on-SiC HFETs. - Alexander Pooth; Johan Bergsten; Niklas Rorsman; Hassan Hirshy; R. Perks; Paul J. Tasker; Trevor Martin; Richard F. Webster; Dave Cherns; Michael J. Uren; Martin Kuball (Microelectron. Reliab., 2017)

On the origin of dynamic Ron in commercial GaN-on-Si HEMTs. - Serge Karboyan; Michael J. Uren; Manikant; James W. Pomeroy; Martin Kuball (Microelectron. Reliab., 2018)

Thermal analysis of semiconductor devices and materials - Why should I not trust a thermal simulation ? - Martin Kuball; James W. Pomeroy; Filip Gucmann; Bahar Oner (BCICTS, 2019)

Current collapse and kink effect in GaN RF HEMTs: the key role of the epitaxial buffer. - Michael J. Uren; Martin Kuball (BCICTS, 2020)

Dielectric Thickness and Fin Width Dependent OFF-State Degradation in AlGaN/GaN SLCFETs. - Akhil S. Kumar; Michael J. Uren; Matthew D. Smith 003; Martin Kuball; Justin Parke; H. George Henry; Robert S. Howell (IRPS, 2023)