Electrical reliability aspects of through the gate implanted MOS structures with thin oxides. - Michael P. M. Jank; Martin Lemberger; Anton J. Bauer; Lothar Frey; Heiner Ryssel (Microelectron. Reliab., 2001)

Electrical characterization of zirconium silicate films obtained from novel MOCVD precursors. - Albena Paskaleva; Martin Lemberger; Stefan Zürcher; Anton J. Bauer; Lothar Frey; Heiner Ryssel (Microelectron. Reliab., 2003)

Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor. - Martin Lemberger; Albena Paskaleva; Stefan Zürcher; Anton J. Bauer; Lothar Frey; Heiner Ryssel (Microelectron. Reliab., 2005)

Conduction mechanisms and an evidence for phonon-assisted conduction process in thin high-k HfxTiySizO films. - Albena Paskaleva; Anton J. Bauer; Martin Lemberger (Microelectron. Reliab., 2005)

Chemical vapor deposition of tantalum nitride films for metal gate application using TBTDET and novel single-source MOCVD precursors. - Martin Lemberger; A. Baunemann; Anton J. Bauer (Microelectron. Reliab., 2007)

Polarity asymmetry of stress and charge trapping behavior of thin Hf- and Zr-silicate layers. - Albena Paskaleva; Martin Lemberger; Anton J. Bauer (Microelectron. Reliab., 2007)