All CVD Boron Nitride Encapsulated Graphene FETs. - Himadri Pandey; M. Shaygan; Simon Sawallich; Satender Kataria; Martin Otto 003; Zhenxing Wang; Michael Nagel; Daniel Neumaier; Max Christian Lemme (DRC, 2018)

Record High Bandwidth Integrated Graphene Photodetectors for Communication Beyond 180 Gb/s. - Daniel Schall 003; Emiliano Pallecchi; Guillaume Ducournau; Vanessa Avramovic; Martin Otto 003; Daniel Neumaier (OFC, 2018)

Low Hysteresis MoS2-FET Enabled by CVD-Grown h-BN Encapsulation. - Agata Piacentini; Daniel Schneider; Martin Otto 003; Bárbara Canto; Zhenyu Wang; Aleksandra Radenovic; Andras Kis; Max Christian Lemme; Daniel Neumaier (DRC, 2021)