Modeling substrate effects in the design of high-speed Si-bipolar ICs. - Martin Pfost; Hans-Martin Rein; Thomas Holzwarth (IEEE J. Solid State Circuits, 1996)

Modeling and measurement of substrate coupling in Si-bipolar IC's up to 40 GHz. - Martin Pfost; Hans-Martin Rein (IEEE J. Solid State Circuits, 1998)

An experimental study on substrate coupling in bipolar/BiCMOS technologies. - Martin Pfost; Pietro Brenner; Thomas Huttner; Andriy Romanyuk (IEEE J. Solid State Circuits, 2004)

An experimental study of integrated DMOS transistors with increased energy capability. - Timo Zawischka; Martin Pfost; Michael Ebli; Dragos Costachescu (ESSDERC, 2013)

Electrical and thermal failure modes of 600 V p-gate GaN HEMTs. - Thorsten Oeder; Alberto Castellazzi; Martin Pfost (Microelectron. Reliab., 2017)

Aging sensors for on-chip metallization of integrated LDMOS transistors under cyclic thermo-mechanical stress. - Matthias Ritter; Martin Pfost (Microelectron. Reliab., 2017)

Single pulse short-circuit robustness and repetitive stress aging of GaN GITs. - Alberto Castellazzi; Asad Fayyaz; Siwei Zhu; Thorsten Oeder; Martin Pfost (IRPS, 2018)